dmn62d0sfd document number: ds35473 rev. 3 - 2 1 of 6 www.diodes.com january 2012 ? diodes incorporated dmn62d0sfd new product n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = 25c 60v 2? @ v gs = 10v 540ma 3? @ v gs = 5v 430ma description and applications this new generation mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? dc-dc converters ? power management functions ? battery operated systems and solid-state relays ? load switch features and benefits ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? esd protected gate to 2kv ? lead free/rohs compliant (note 1) ? green device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: x1-dfn1212-3 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: solderable per mil-std-202, method 208 ? terminals: finish ? nipd au over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.005 grams (approximate) ordering information (note 3) part number case packaging dmn62d0sfd -7 x1-dfn1212-3 3000/tape & reel notes: 1. no purposefully added lead. 2. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com 3. for packaging details, go to our website at http://www.diodes.com marking information date code key year 2007 2008 2009 2010 2011 2012 code u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bottom view equivalent circuit top view pin-out k62 = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) source gate protection diode gate drain body diode d s g esd protected to 2kv k62 ym
dmn62d0sfd document number: ds35473 rev. 3 - 2 2 of 6 www.diodes.com january 2012 ? diodes incorporated dmn62d0sfd new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 10v steady state t a = 25c t a = 70c i d 540 430 ma t<10s t a = 25c t a = 70c i d 630 500 ma continuous drain current (note 5) v gs = 5v steady state t a = 25c t a = 70c i d 430 340 ma t<10s t a = 25c t a = 70c i d 510 410 ma pulsed drain current (10 s pulse, duty cycle = 1%) i dm 1.0 a maximum body diode forward current (note 5) i s 1.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 4) p d 0.43 w thermal resistance, junction to ambient (note 4) steady state r ja 260 c/w t<10s 182 c/w total power dissipation (note 5) p d 0.89 w thermal resistance, junction to ambient (note 5) steady state r ja 140 c/w t<10s 98 c/w thermal resistance, junction to case (note 5) r jc 112 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 60 - - v v gs = 0v, i d = 10 a zero gate voltage drain current t j = 25c i dss - - 100 na v ds = 60v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 1.0 1.6 2.5 v v ds = 10v, i d = 1ma static drain-source on-resistance r ds (on) - - 2 v gs = 10v, i d = 500ma - - 3 v gs = 5v, i d = 50ma forward transfer admittance |y fs | - 130 - ms v ds = 3v, i d = 30ma diode forward voltage v sd - 0.8 1.2 v v gs = 0v, i s = 300ma dynamic characteristics (note 7) input capacitance c iss - 30.2 - pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 4.4 - pf reverse transfer capacitance c rss - 2.8 - pf gate resistance r g - 131 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 4.5v) q g - 0.39 - nc v ds = 10v, i d = 1a total gate charge (v gs = 10.0v) q g - 0.87 - nc gate-source charge q g s - 0.14 - nc gate-drain charge q g d - 0.09 - nc turn-on delay time t d ( on ) - 3.95 - ns v ds = 30v, i d = 200ma v gs = 10v, r g = 25 turn-on rise time t r - 3.81 - ns turn-off delay time t d ( off ) - 16.0 - ns turn-off fall time t f - 9.04 - ns notes: 4. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 5. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal vias to bottom layer 1inch square copper plate 6 .short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to production testing.
dmn62d0sfd document number: ds35473 rev. 3 - 2 3 of 6 www.diodes.com january 2012 ? diodes incorporated dmn62d0sfd new product v , drain-source voltage (v) fig.1 typical output characteristic ds i, d r ai n c u r r e n t (a) d 0.001 0.01 0.1 1 0.1 0.3 0.5 0.7 0.9 1.1 v , source-drain voltage (v) sd fig. 2 maximum forward current vs. source-drain voltage i, maxim u m f o r wa r d c u r r en t (a) s t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.2 0.4 0.6 0.8 1.0 i , drain current d fig. 3 typical on-resistance vs. drain current and temperature r , drain-source on-resistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5.0v gs 0 0.2 0.4 0.6 0.8 1.0 i , drain current d fig. 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs 50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 5 on-resistance variation with temperature j r , d r ain-s o u r c e on-resistance (normalized) ds(on) v=v i = 150a gs d 10 v=v i = 300ma gs d 10 v , gate threshold voltage (v) gs(th) i= 1ma d -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 6 gate threshold variation vs. ambient temperature j
dmn62d0sfd document number: ds35473 rev. 3 - 2 4 of 6 www.diodes.com january 2012 ? diodes incorporated dmn62d0sfd new product 0 1 2 3 4 5 6 7 04 8121620 i , drain-source current d fig. 7 typical on-resistance vs. drain current r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) i = 300ma d i = 150ma d 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 v , drain-source voltage (v) ds fig. 8 typical junction capacitance c , j u n c t i o n c a p a c i t an c e (pf) t c iss c oss c rss f = 1mhz 0 2 4 6 8 10 v g a t e t h r es h o ld v o l t a g e (v) gs q ( n c ) g , total gate charge fig. 9 gate charge v = 10v, i= a ds d 250m 0.1 1 10 100 v , drain-source voltage (v) fig. 10 soa, safe operation area ds i, d r ain c u r r en t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0 1 2 3 4 5 6 7 8 9 10 0.001 0.01 0.1 1 10 100 1,000 t 1 , pulse duration time (sec) fig. 11 single pulse maximum power dissipation p , p eak t r a n sie n t p o we r (w) (pk) single pulse r = 261c/w ja r = r * r (t) (t) ? ja ja t -t = p * r ja ja(t)
dmn62d0sfd document number: ds35473 rev. 3 - 2 5 of 6 www.diodes.com january 2012 ? diodes incorporated dmn62d0sfd new product 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 12 transient thermal resistance 0.001 0.01 0.1 1 r(t), t r a n sie n t t h e r mal r esis t a n c e r = r * r ja(t) (t) ja ja r = 261c/w duty cycle, d = t1/t2 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse package outline dimensions suggested pad layout x1-dfn1212-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.02 a3 - - 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 d 1.15 1.25 1.20 e 1.15 1.25 1.20 e - - 0.80 l 0.25 0.35 0.30 all dimensions in mm dimensions value (in mm) c 0.80 x 0.42 x1 0.32 y 0.50 y1 0.50 y2 1.50 a1 a3 d e e b a b1 (2x) l y2 x x1 (2x) y y1 (2x) c
dmn62d0sfd document number: ds35473 rev. 3 - 2 6 of 6 www.diodes.com january 2012 ? diodes incorporated dmn62d0sfd new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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